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Out of stock
$41.06900
Standard Package: 450
Quantity Unit Price
1 $41.06900
200 $15.89370
450 $15.33516
900 $15.06000

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Request for SCT2160KEGC11

SCT2160KEGC11

1200V, 22A, THD, SILICON-CARBIDE

Order Code:
CIS1398099
Manufacturer Part No:
SCT2160KEGC11
Manufacturer:
Package / Case:
TO-247-3
Detailed Description:
N-Channel 1200 V 22A (Tc) 165W (Tc) Through Hole TO-247N
Technical Datasheet:
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SCT2160KEGC11 Information

More Information
Mfr Rohm Semiconductor
Series -
Package Tube
Product Status Active
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247N
Base Product Number SCT2160
Technology SiCFET (Silicon Carbide)
FET Type N-Channel
Power Dissipation (Max) 165W (Tc)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 208mOhm @ 7A, 18V
Vgs(th) (Max) @ Id 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 18 V
Vgs (Max) +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 800 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected