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$29.04280
Standard Package: 1000
Quantity Unit Price
1 $29.04280
200 $11.23956
500 $10.84458
1000 $10.64999

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Request for SCTH35N65G2V-7AG

SCTH35N65G2V-7AG

SICFET N-CH 650V 45A H2PAK-7

Order Code:
CIS1155948
Manufacturer Part No:
SCTH35N65G2V-7AG
Manufacturer:
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Detailed Description:
N-Channel 650 V 45A (Tc) 208W (Tc) Surface Mount H2PAK-7
Technical Datasheet:
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SCTH35N65G2V-7AG Information

More Information
Mfr STMicroelectronics
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device Package H2PAK-7
Base Product Number SCTH35
Technology SiCFET (Silicon Carbide)
FET Type N-Channel
Power Dissipation (Max) 208W (Tc)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
Rds On (Max) @ Id, Vgs 67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 400 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected