Out of stock
$80.61090
Standard Package:
1000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $80.61090 | |
| 200 | $31.19642 | |
| 500 | $30.10011 | |
| 1000 | $29.56002 |
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Request for SCTH70N120G2V-7
SCTH70N120G2V-7
SILICON CARBIDE POWER MOSFET 120
Order Code:
CIS1163807
Manufacturer Part No:
SCTH70N120G2V-7
Manufacturer:
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Detailed Description:
N-Channel 1200 V 90A (Tc) 469W (Tc) Surface Mount H2PAK-7
Technical Datasheet:
Buy with Confidence
SCTH70N120G2V-7 Information
| Mfr | STMicroelectronics |
|---|---|
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Supplier Device Package | H2PAK-7 |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 469W (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 50A, 18V |
| Vgs(th) (Max) @ Id | 4.9V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3540 pF @ 800 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |