Out of stock
$71.31170
Standard Package:
3000
Quantity | Unit Price | |
---|---|---|
1 | $71.31170 | |
200 | $27.59763 | |
500 | $26.62779 | |
1000 | $26.15000 |
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Request for SCTL90N65G2V
SCTL90N65G2V
SILICON CARBIDE POWER MOSFET 650
Order Code:
CIS1163809
Manufacturer Part No:
SCTL90N65G2V
Manufacturer:
Package / Case:
8-PowerVDFN
Detailed Description:
N-Channel 650 V 40A (Tc) 935W (Tc) Surface Mount PowerFlat™ (8x8) HV
Technical Datasheet:
SCTL90N65G2V Information
Mfr | STMicroelectronics |
---|---|
Series | - |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Supplier Device Package | PowerFlat™ (8x8) HV |
Technology | SiCFET (Silicon Carbide) |
FET Type | N-Channel |
Power Dissipation (Max) | 935W (Tc) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Rds On (Max) @ Id, Vgs | 24mOhm @ 40A, 18V |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 157 nC @ 18 V |
Vgs (Max) | +22V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 3380 pF @ 400 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
REACH Status | REACH Unaffected |