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$71.31170
Standard Package: 3000
Quantity Unit Price
1 $71.31170
200 $27.59763
500 $26.62779
1000 $26.15000

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Request for SCTL90N65G2V

SCTL90N65G2V

SILICON CARBIDE POWER MOSFET 650

Order Code:
CIS1163809
Manufacturer Part No:
SCTL90N65G2V
Manufacturer:
Package / Case:
8-PowerVDFN
Detailed Description:
N-Channel 650 V 40A (Tc) 935W (Tc) Surface Mount PowerFlat™ (8x8) HV
Technical Datasheet:
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SCTL90N65G2V Information

More Information
Mfr STMicroelectronics
Series -
Package Tape & Reel (TR)
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PowerFlat™ (8x8) HV
Technology SiCFET (Silicon Carbide)
FET Type N-Channel
Power Dissipation (Max) 935W (Tc)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 24mOhm @ 40A, 18V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 157 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3380 pF @ 400 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected