Out of stock
$0.19060
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.19060 | |
| 10 | $0.16885 | |
| 30 | $0.15976 | |
| 100 | $0.14827 | |
| 500 | $0.14316 | |
| 1000 | $0.13998 |
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Request for SI1922EDH-T1-GE3
SI1922EDH-T1-GE3
MOSFET 2N-CH 20V 1.3A SOT-363
Order Code:
CIS1000012
Manufacturer Part No:
SI1922EDH-T1-GE3
Manufacturer:
Package / Case:
6-TSSOP, SC-88, SOT-363
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 20V 1.3A 1.25W Surface Mount SC-70-6
Technical Datasheet:
Buy with Confidence
SI1922EDH-T1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-70-6 |
| Base Product Number | SI1922 |
| Power - Max | 1.25W |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A |
| Rds On (Max) @ Id, Vgs | 198mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | Logic Level Gate |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |