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In stock: 9181
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Request for SI1926DL-T1-GE3

SI1926DL-T1-GE3

MOSFET 2N-CH 60V 0.37A SOT363

Order Code:
CIS1000363
Manufacturer Part No:
SI1926DL-T1-GE3
Manufacturer:
Package / Case:
6-TSSOP, SC-88, SOT-363
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 370mA 510mW Surface Mount SC-70-6
Technical Datasheet:
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SI1926DL-T1-GE3 Information

More Information
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Active
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6
Base Product Number SI1926
Power - Max 510mW
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 370mA
Rds On (Max) @ Id, Vgs 1.4Ohm @ 340mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 18.5pF @ 30V
FET Feature Logic Level Gate
More Information
ECCN EAR99
HTSUS 8541.21.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected