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$0.71430
Standard Package: 3000
Quantity Unit Price
1 $0.71430
200 $0.27643
500 $0.26672
1000 $0.26201

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Request for SI2314EDS-T1-GE3

SI2314EDS-T1-GE3

MOSFET N-CH 20V 3.77A SOT23-3

Order Code:
CIS1001988
Manufacturer Part No:
SI2314EDS-T1-GE3
Manufacturer:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Detailed Description:
N-Channel 20 V 3.77A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Technical Datasheet:
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SI2314EDS-T1-GE3 Information

More Information
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Active
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number SI2314
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 750mW (Ta)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.77A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 33mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 25 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.21.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected