Out of stock
$0.61340
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.61340 | |
| 200 | $0.23739 | |
| 500 | $0.22917 | |
| 1000 | $0.22500 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for SI2316DS-T1-GE3
SI2316DS-T1-GE3
MOSFET N-CH 30V 2.9A SOT23-3
Order Code:
CIS1001994
Manufacturer Part No:
SI2316DS-T1-GE3
Manufacturer:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Detailed Description:
N-Channel 30 V 2.9A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
Technical Datasheet:
Buy with Confidence
SI2316DS-T1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Base Product Number | SI2316 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 700mW (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.4A, 10V |
| Vgs(th) (Max) @ Id | 800mV @ 250µA (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 215 pF @ 15 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.21.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |