Out of stock
$0.68720
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.68720 | |
| 200 | $0.26602 | |
| 500 | $0.25667 | |
| 1000 | $0.25200 |
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Request for SI3129DV-T1-GE3
SI3129DV-T1-GE3
P-CHANNEL 80 V (D-S) MOSFET TSOP
Order Code:
CIS1002076
Manufacturer Part No:
SI3129DV-T1-GE3
Manufacturer:
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Detailed Description:
P-Channel 80 V 3.8A (Ta), 5.4A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
Technical Datasheet:
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SI3129DV-T1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | 6-TSOP |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Power Dissipation (Max) | 2W (Ta), 4.2W (Tc) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta), 5.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 82.7mOhm @ 3.8A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 805 pF @ 40 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |