In stock:
1511
$0.66330
Standard Package:
2500
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.66330 | |
| 10 | $0.57415 | |
| 30 | $0.51817 | |
| 100 | $0.46106 | |
| 500 | $0.43539 | |
| 1000 | $0.42431 |
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Request for SI4590DY-T1-GE3
SI4590DY-T1-GE3
MOSFET N/P CHAN 100V SO8 DUAL
Order Code:
CIS1000342
Manufacturer Part No:
SI4590DY-T1-GE3
Manufacturer:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Detailed Description:
Mosfet Array N and P-Channel 100V 3.4A, 2.8A 2.4W, 3.4W Surface Mount 8-SOIC
Technical Datasheet:
Buy with Confidence
SI4590DY-T1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | SI4590 |
| Power - Max | 2.4W, 3.4W |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A, 2.8A |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 50V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |