Out of stock
$0.65000
Standard Package:
2500
Quantity | Unit Price | |
---|---|---|
1 | $0.65000 | |
10 | $0.63590 | |
30 | $0.62673 | |
100 | $0.61718 |
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Request for SI4925BDY-T1-E3
SI4925BDY-T1-E3
MOSFET 2P-CH 30V 5.3A 8-SOIC
Order Code:
CIS1000010
Manufacturer Part No:
SI4925BDY-T1-E3
Manufacturer:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 30V 5.3A 1.1W Surface Mount 8-SOIC
Technical Datasheet:
SI4925BDY-T1-E3 Information
Mfr | Vishay Siliconix |
---|---|
Series | TrenchFET® |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOIC |
Base Product Number | SI4925 |
Power - Max | 1.1W |
FET Type | 2 P-Channel (Dual) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 5.3A |
Rds On (Max) @ Id, Vgs | 25mOhm @ 7.1A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | Logic Level Gate |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |