In stock:
1914
$0.00000
Standard Package:
2500
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Request for SI4966DY-T1-E3
SI4966DY-T1-E3
MOSFET 2N-CH 20V 8SOIC
Order Code:
CIS1000022
Manufacturer Part No:
SI4966DY-T1-E3
Manufacturer:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 20V 2W Surface Mount 8-SOIC
Technical Datasheet:
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SI4966DY-T1-E3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Obsolete |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | SI4966 |
| Power - Max | 2W |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7.1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | Logic Level Gate |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |