Out of stock
$0.60020
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.60020 | |
| 10 | $0.48886 | |
| 30 | $0.44103 | |
| 100 | $0.38143 | |
| 500 | $0.35472 | |
| 1000 | $0.33887 |
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Request for SI5515CDC-T1-GE3
SI5515CDC-T1-GE3
MOSFET N/P-CH 20V 4A 1206-8
Order Code:
CIS1000297
Manufacturer Part No:
SI5515CDC-T1-GE3
Manufacturer:
Package / Case:
8-SMD, Flat Lead
Detailed Description:
Mosfet Array N and P-Channel 20V 4A 3.1W Surface Mount 1206-8 ChipFET™
Technical Datasheet:
Buy with Confidence
SI5515CDC-T1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Supplier Device Package | 1206-8 ChipFET™ |
| Base Product Number | SI5515 |
| Power - Max | 3.1W |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 6A, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11.3nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 632pF @ 10V |
| FET Feature | Logic Level Gate |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |