Out of stock
$1.22980
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.22980 | |
| 200 | $0.47655 | |
| 500 | $0.45958 | |
| 1000 | $0.45281 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for SI8410DB-T2-E1
SI8410DB-T2-E1
MOSFET N-CH 20V 4MICRO FOOT
Order Code:
CIS1002188
Manufacturer Part No:
SI8410DB-T2-E1
Manufacturer:
Package / Case:
4-UFBGA
Detailed Description:
N-Channel 20 V 3.8A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Micro Foot (1x1)
Technical Datasheet:
Buy with Confidence
SI8410DB-T2-E1 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 4-UFBGA |
| Supplier Device Package | 4-Micro Foot (1x1) |
| Base Product Number | SI8410 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 780mW (Ta), 1.8W (Tc) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 850mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 8 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 10 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |