Out of stock
$0.39520
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.39520 | |
| 200 | $0.15302 | |
| 500 | $0.14769 | |
| 1000 | $0.14500 |
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Request for SI8481DB-T1-E1
SI8481DB-T1-E1
MOSFET P-CH 20V 9.7A 4MICRO FOOT
Order Code:
CIS1002014
Manufacturer Part No:
SI8481DB-T1-E1
Manufacturer:
Package / Case:
4-UFBGA
Detailed Description:
P-Channel 20 V 9.7A (Tc) 2.8W (Tc) Surface Mount 4-MICRO FOOT® (1.6x1.6)
Technical Datasheet:
Buy with Confidence
SI8481DB-T1-E1 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® Gen III |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 4-UFBGA |
| Supplier Device Package | 4-MICRO FOOT® (1.6x1.6) |
| Base Product Number | SI8481 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Power Dissipation (Max) | 2.8W (Tc) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 3A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 10 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |