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Request for SIA430DJ-T1-GE3

SIA430DJ-T1-GE3

MOSFET N-CH 20V 12A PPAK SC70-6

Order Code:
CIS1001670
Manufacturer Part No:
SIA430DJ-T1-GE3
Manufacturer:
Package / Case:
PowerPAK® SC-70-6
Detailed Description:
N-Channel 20 V 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6
Technical Datasheet:
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SIA430DJ-T1-GE3 Information

More Information
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6
Supplier Device Package PowerPAK® SC-70-6
Base Product Number SIA430
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 3.5W (Ta), 19.2W (Tc)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 10 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected