Out of stock
$0.90710
Standard Package:
10000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.90710 | |
| 200 | $0.35014 | |
| 500 | $0.33880 | |
| 1000 | $0.33300 |
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Request for SIA456DJ-T3-GE3
SIA456DJ-T3-GE3
MOSFET N-CH 200V 1.1A/2.6A PPAK
Order Code:
CIS1001981
Manufacturer Part No:
SIA456DJ-T3-GE3
Manufacturer:
Package / Case:
PowerPAK® SC-70-6
Detailed Description:
N-Channel 200 V 1.1A (Ta), 2.6A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
Technical Datasheet:
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SIA456DJ-T3-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SC-70-6 |
| Supplier Device Package | PowerPAK® SC-70-6 |
| Base Product Number | SIA456 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta), 2.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 1.38Ohm @ 750mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 100 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |