Out of stock
$3.98390
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $3.98390 | |
| 200 | $1.54456 | |
| 500 | $1.48839 | |
| 1000 | $1.46249 |
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Request for SIDR220DP-T1-GE3
SIDR220DP-T1-GE3
MOSFET N-CH 25V 87.7A/100A PPAK
Order Code:
CIS1001898
Manufacturer Part No:
SIDR220DP-T1-GE3
Manufacturer:
Package / Case:
PowerPAK® SO-8
Detailed Description:
N-Channel 25 V 87.7A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
Technical Datasheet:
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SIDR220DP-T1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 |
| Supplier Device Package | PowerPAK® SO-8DC |
| Base Product Number | SIDR220 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 6.25W (Ta), 125W (Tc) |
| Drain to Source Voltage (Vdss) | 25 V |
| Current - Continuous Drain (Id) @ 25°C | 87.7A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Vgs (Max) | +16V, -12V |
| Input Capacitance (Ciss) (Max) @ Vds | 1085 pF @ 10 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |