Out of stock
$5.23870
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $5.23870 | |
| 200 | $2.02842 | |
| 500 | $1.95718 | |
| 1000 | $1.91998 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for SIE808DF-T1-E3
SIE808DF-T1-E3
MOSFET N-CH 20V 60A 10POLARPAK
Order Code:
CIS1002125
Manufacturer Part No:
SIE808DF-T1-E3
Manufacturer:
Package / Case:
10-PolarPAK® (L)
Detailed Description:
N-Channel 20 V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
Technical Datasheet:
Buy with Confidence
SIE808DF-T1-E3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 10-PolarPAK® (L) |
| Supplier Device Package | 10-PolarPAK® (L) |
| Base Product Number | SIE808 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8800 pF @ 10 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |