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Out of stock
$7.38750
Standard Package: 1000
Quantity Unit Price
1 $7.38750
200 $2.86118
500 $2.76293
1000 $2.71121

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Request for SIHB12N50E-GE3

SIHB12N50E-GE3

MOSFET N-CH 500V 10.5A D2PAK

Order Code:
CIS1002119
Manufacturer Part No:
SIHB12N50E-GE3
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 500 V 10.5A (Tc) 114W (Tc) Surface Mount D²PAK (TO-263)
Technical Datasheet:
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SIHB12N50E-GE3 Information

More Information
Mfr Vishay Siliconix
Series -
Package Bulk
Product Status Active
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK (TO-263)
Base Product Number SIHB12
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 114W (Tc)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 886 pF @ 100 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected