Out of stock
$22.23560
Standard Package:
1000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $22.23560 | |
| 200 | $8.60518 | |
| 500 | $8.30055 | |
| 1000 | $8.15379 |
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Request for SIHB35N60E-GE3
SIHB35N60E-GE3
MOSFET N-CH 650V 32A D2PAK
Order Code:
CIS1000915
Manufacturer Part No:
SIHB35N60E-GE3
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 650 V 32A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
Technical Datasheet:
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SIHB35N60E-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | - |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D²PAK (TO-263) |
| Base Product Number | SIHB35 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 250W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 94mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 132 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2760 pF @ 100 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |