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In stock: 2012
$0.00000
Standard Package: 50

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Request for SIHB35N60EF-GE3

SIHB35N60EF-GE3

MOSFET N-CH 600V 32A D2PAK

Order Code:
CIS1002094
Manufacturer Part No:
SIHB35N60EF-GE3
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 600 V 32A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
Technical Datasheet:
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SIHB35N60EF-GE3 Information

More Information
Mfr Vishay Siliconix
Series EF
Package Bulk
Product Status Active
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK (TO-263)
Base Product Number SIHB35
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 250W (Tc)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 97mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 134 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2568 pF @ 100 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected