Out of stock
$2.19390
Standard Package:
75
| Quantity | Unit Price | |
|---|---|---|
| 1 | $2.19390 | |
| 200 | $0.84904 | |
| 500 | $0.81920 | |
| 1000 | $0.80450 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for SIHD3N50D-E3
SIHD3N50D-E3
MOSFET N-CH 500V 3A DPAK
Order Code:
CIS1001983
Manufacturer Part No:
SIHD3N50D-E3
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
N-Channel 500 V 3A (Tc) 69W (Tc) Surface Mount TO-252AA
Technical Datasheet:
Buy with Confidence
SIHD3N50D-E3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | - |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252AA |
| Base Product Number | SIHD3 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 69W (Tc) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.2Ohm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 100 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |