Out of stock
$1.69470
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.69470 | |
| 200 | $0.65602 | |
| 500 | $0.63297 | |
| 1000 | $0.62162 |
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Request for SIHFR220-GE3
SIHFR220-GE3
MOSFET N-CH 200V 4.8A DPAK
Order Code:
CIS1001993
Manufacturer Part No:
SIHFR220-GE3
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
N-Channel 200 V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount TO-252AA
Technical Datasheet:
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SIHFR220-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252AA |
| Base Product Number | SIHFR220 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2.9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 25 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |