Out of stock
$10.63540
Standard Package:
500
| Quantity | Unit Price | |
|---|---|---|
| 1 | $10.63540 | |
| 200 | $4.11590 | |
| 500 | $3.97232 | |
| 1000 | $3.90000 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for SIHG28N65EF-GE3
SIHG28N65EF-GE3
MOSFET N-CH 650V 28A TO247AC
Order Code:
CIS1001868
Manufacturer Part No:
SIHG28N65EF-GE3
Manufacturer:
Package / Case:
TO-247-3
Detailed Description:
N-Channel 650 V 28A (Tc) 250W (Tc) Through Hole TO-247AC
Technical Datasheet:
Buy with Confidence
SIHG28N65EF-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | - |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247AC |
| Base Product Number | SIHG28 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 250W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 117mOhm @ 14A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 146 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3249 pF @ 100 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |