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Request for SIHG33N60E-E3

SIHG33N60E-E3

MOSFET N-CH 600V 33A TO247AC

Order Code:
CIS1001869
Manufacturer Part No:
SIHG33N60E-E3
Manufacturer:
Package / Case:
TO-247-3
Detailed Description:
N-Channel 600 V 33A (Tc) 278W (Tc) Through Hole TO-247AC
Technical Datasheet:
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SIHG33N60E-E3 Information

More Information
Mfr Vishay Siliconix
Series E
Package Tube
Product Status Active
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AC
Base Product Number SIHG33
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 278W (Tc)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3508 pF @ 100 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
Moisture Sensitivity Level (MSL) 1 (Unlimited)