Out of stock
$4.80820
Standard Package:
50
| Quantity | Unit Price | |
|---|---|---|
| 1 | $4.80820 | |
| 10 | $4.12544 | |
| 30 | $3.75136 | |
| 100 | $3.32679 | |
| 500 | $3.13975 | |
| 1000 | $3.05417 |
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Request for SIHP23N60E-GE3
SIHP23N60E-GE3
MOSFET N-CH 600V 23A TO220AB
Order Code:
CIS1002108
Manufacturer Part No:
SIHP23N60E-GE3
Manufacturer:
Package / Case:
TO-220-3
Detailed Description:
N-Channel 600 V 23A (Tc) 227W (Tc) Through Hole TO-220AB
Technical Datasheet:
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SIHP23N60E-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | - |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Base Product Number | SIHP23 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 227W (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 158mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2418 pF @ 100 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |