In stock:
10
$0.00000
Standard Package:
3000
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for SIHU2N80AE-GE3
SIHU2N80AE-GE3
MOSFET N-CH 800V 2.9A TO251AA
Order Code:
CIS1002159
Manufacturer Part No:
SIHU2N80AE-GE3
Manufacturer:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Detailed Description:
N-Channel 800 V 2.9A (Tc) 62.5W (Tc) Through Hole TO-251AA
Buy with Confidence
SIHU2N80AE-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | E |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package | TO-251AA |
| Base Product Number | SIHU2 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 62.5W (Tc) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.9Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 100 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |