In stock:
3
$2.16250
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $2.16250 | |
| 200 | $0.83905 | |
| 500 | $0.81051 | |
| 1000 | $0.79429 |
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Request for SISF02DN-T1-GE3
SISF02DN-T1-GE3
MOSFET DUAL N-CH 25V 1212-8
Order Code:
CIS1000265
Manufacturer Part No:
SISF02DN-T1-GE3
Manufacturer:
Package / Case:
PowerPAK® 1212-8SCD
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Common Drain 25V 30.5A (Ta), 60A (Tc) 5.2W (Ta), 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD
Technical Datasheet:
Buy with Confidence
SISF02DN-T1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8SCD |
| Supplier Device Package | PowerPAK® 1212-8SCD |
| Base Product Number | SISF02 |
| Power - Max | 5.2W (Ta), 69.4W (Tc) |
| FET Type | 2 N-Channel (Dual) Common Drain |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 30.5A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2650pF @ 10V |
| FET Feature | Standard |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |