Out of stock
$1.46790
Standard Package:
3000
Quantity | Unit Price | |
---|---|---|
1 | $1.46790 | |
200 | $0.56749 | |
500 | $0.54855 | |
1000 | $0.53901 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for SISS70DN-T1-GE3
SISS70DN-T1-GE3
MOSFET N-CH 125V 8.5A/31A PPAK
Order Code:
CIS1002181
Manufacturer Part No:
SISS70DN-T1-GE3
Manufacturer:
Package / Case:
PowerPAK® 1212-8S
Detailed Description:
N-Channel 125 V 8.5A (Ta), 31A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
Technical Datasheet:
SISS70DN-T1-GE3 Information
Mfr | Vishay Siliconix |
---|---|
Series | TrenchFET® |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® 1212-8S |
Supplier Device Package | PowerPAK® 1212-8S |
Base Product Number | SISS70 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 5.1W (Ta), 65.8W (Tc) |
Drain to Source Voltage (Vdss) | 125 V |
Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta), 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 29.8mOhm @ 8.5A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15.3 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 535 pF @ 62.5 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |