In stock:
888
$0.81110
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.81110 | |
| 10 | $0.69089 | |
| 30 | $0.62576 | |
| 100 | $0.55147 | |
| 500 | $0.51837 | |
| 1000 | $0.50288 |
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Request for SIZ998DT-T1-GE3
SIZ998DT-T1-GE3
MOSFET 2 N-CH 30V 8-POWERPAIR
Order Code:
CIS1000276
Manufacturer Part No:
SIZ998DT-T1-GE3
Manufacturer:
Package / Case:
8-PowerWDFN
Detailed Description:
Mosfet Array 2 N-Channel (Dual), Schottky 30V 20A (Tc), 60A (Tc) 20.2W, 32.9W Surface Mount 8-PowerPair® (6x5)
Technical Datasheet:
Buy with Confidence
SIZ998DT-T1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PowerPair® (6x5) |
| Base Product Number | SIZ998 |
| Power - Max | 20.2W, 32.9W |
| FET Type | 2 N-Channel (Dual), Schottky |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.1nC @ 4.5V, 19.8nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 930pF @ 15V, 2620pF @ 15V |
| FET Feature | Standard |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |