Out of stock
$1.58400
Standard Package:
3000
Quantity | Unit Price | |
---|---|---|
1 | $1.58400 | |
200 | $0.61285 | |
500 | $0.59257 | |
1000 | $0.58101 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for SIZF360DT-T1-GE3
SIZF360DT-T1-GE3
MOSFET DL N-CH 30V PPAIR 3X3FDC
Order Code:
CIS1000261
Manufacturer Part No:
SIZF360DT-T1-GE3
Manufacturer:
Package / Case:
6-PowerPair™
Detailed Description:
Mosfet Array 2 N-Channel (Dual), Schottky 30V 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc) 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc) Surface Mount 6-PowerPair™
Technical Datasheet:
SIZF360DT-T1-GE3 Information
Mfr | Vishay Siliconix |
---|---|
Series | TrenchFET® Gen IV |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-PowerPair™ |
Supplier Device Package | 6-PowerPair™ |
Base Product Number | SIZF360 |
Power - Max | 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc) |
FET Type | 2 N-Channel (Dual), Schottky |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc) |
Rds On (Max) @ Id, Vgs | 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V, 62nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 15V, 3150pF @ 15V |
FET Feature | Standard |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |