Out of stock
$0.68850
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.68850 | |
| 10 | $0.67156 | |
| 30 | $0.66020 | |
| 100 | $0.64898 |
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Request for SIZF914DT-T1-GE3
SIZF914DT-T1-GE3
DUAL N-CH 25-V (D-S) MOSFET W/SC
Order Code:
CIS1000233
Manufacturer Part No:
SIZF914DT-T1-GE3
Manufacturer:
Package / Case:
8-PowerWDFN
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 25V 23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc) 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) Surface Mount 8-PowerPair® (6x5)
Technical Datasheet:
Buy with Confidence
SIZF914DT-T1-GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | PowerPAIR®, TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PowerPair® (6x5) |
| Base Product Number | SIZF914 |
| Power - Max | 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA, 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V, 98nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1050pF @ 10V, 4670pF @ 10V |
| FET Feature | Standard |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |