Out of stock
$4.25710
Standard Package:
3000
Quantity | Unit Price | |
---|---|---|
1 | $4.25710 | |
200 | $1.64963 | |
500 | $1.59471 | |
1000 | $1.56321 |
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Request for SIZF918DT-T1-GE3
SIZF918DT-T1-GE3
MOSFET DUAL N-CH 30V POWERPAIR 6
Order Code:
CIS1000234
Manufacturer Part No:
SIZF918DT-T1-GE3
Manufacturer:
Package / Case:
8-PowerWDFN
Detailed Description:
Mosfet Array 2 N-Channel (Dual), Schottky 30V 23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc) 3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc) Surface Mount 8-PowerPair® (6x5)
Technical Datasheet:
SIZF918DT-T1-GE3 Information
Mfr | Vishay Siliconix |
---|---|
Series | TrenchFET® Gen IV |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerWDFN |
Supplier Device Package | 8-PowerPair® (6x5) |
Base Product Number | SIZF918 |
Power - Max | 3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc) |
FET Type | 2 N-Channel (Dual), Schottky |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc) |
Rds On (Max) @ Id, Vgs | 4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 250µA, 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V, 56nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1060pF @ 15V, 2650pF @ 15V |
FET Feature | Standard |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |