Out of stock
$1.63580
Standard Package:
2500
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.63580 | |
| 200 | $0.63273 | |
| 500 | $0.61293 | |
| 1000 | $0.60001 |
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Request for SQD100N02_3M5L4GE3
SQD100N02_3M5L4GE3
MOSFET N-CH 20V 100A TO252AA
Order Code:
CIS1001952
Manufacturer Part No:
SQD100N02_3M5L4GE3
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
N-Channel 20 V 100A (Tc) 83W (Tc) Surface Mount TO-252AA
Technical Datasheet:
Buy with Confidence
SQD100N02_3M5L4GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | Automotive, AEC-Q101, TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252AA |
| Base Product Number | SQD100 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 83W (Tc) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 10 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |