Out of stock
$1.92820
Standard Package:
3000
Quantity | Unit Price | |
---|---|---|
1 | $1.92820 | |
200 | $0.74795 | |
500 | $0.72192 | |
1000 | $0.70900 |
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Request for SQJ412EP-T2_GE3
SQJ412EP-T2_GE3
MOSFET N-CH 40V 32A PPAK SO-8
Order Code:
CIS1001922
Manufacturer Part No:
SQJ412EP-T2_GE3
Manufacturer:
Package / Case:
PowerPAK® SO-8
Detailed Description:
N-Channel 40 V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
Technical Datasheet:
SQJ412EP-T2_GE3 Information
Mfr | Vishay Siliconix |
---|---|
Series | Automotive, AEC-Q101, TrenchFET® |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SO-8 |
Supplier Device Package | PowerPAK® SO-8 |
Base Product Number | SQJ412 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 83W (Tc) |
Drain to Source Voltage (Vdss) | 40 V |
Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.1mOhm @ 10.3A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 5950 pF @ 20 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |