Out of stock
$1.26440
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.26440 | |
| 200 | $0.48932 | |
| 500 | $0.47415 | |
| 1000 | $0.46669 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for SQS966ENW-T1_GE3
SQS966ENW-T1_GE3
MOSFET N-CHAN 60V
Order Code:
CIS1000264
Manufacturer Part No:
SQS966ENW-T1_GE3
Manufacturer:
Package / Case:
PowerPAK® 1212-8W Dual
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 6A (Tc) 27.8W (Tc) Surface Mount, Wettable Flank PowerPAK® 1212-8W Dual
Technical Datasheet:
Buy with Confidence
SQS966ENW-T1_GE3 Information
| Mfr | Vishay Siliconix |
|---|---|
| Series | Automotive, AEC-Q101, TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | PowerPAK® 1212-8W Dual |
| Supplier Device Package | PowerPAK® 1212-8W Dual |
| Base Product Number | SQS966 |
| Power - Max | 27.8W (Tc) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 1.25A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 572pF @ 25V |
| FET Feature | Standard |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |