Out of stock
$0.88510
Standard Package:
50
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.88510 | |
| 10 | $0.76455 | |
| 30 | $0.69932 | |
| 100 | $0.62435 | |
| 500 | $0.59125 | |
| 1000 | $0.57611 |
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Request for TK8R2A06PL,S4X
TK8R2A06PL,S4X
MOSFET N-CH 60V 50A TO220SIS
Order Code:
CIS1165886
Manufacturer Part No:
TK8R2A06PL,S4X
Manufacturer:
Package / Case:
TO-220-3 Full Pack
Detailed Description:
N-Channel 60 V 50A (Tc) 36W (Tc) Through Hole TO-220SIS
Technical Datasheet:
Buy with Confidence
TK8R2A06PL,S4X Information
| Mfr | Toshiba Semiconductor and Storage |
|---|---|
| Series | U-MOSIX-H |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220SIS |
| Base Product Number | TK8R2A06 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 36W (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 11.4mOhm @ 8A, 4.5V |
| Vgs(th) (Max) @ Id | 2.5V @ 300µA |
| Gate Charge (Qg) (Max) @ Vgs | 28.4 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 pF @ 25 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| REACH Status | REACH Unaffected |