Out of stock
$1.85530
Standard Package:
25
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.85530 | |
| 10 | $1.61188 | |
| 25 | $1.45994 | |
| 100 | $1.30520 | |
| 500 | $1.21077 | |
| 1000 | $1.17997 |
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Request for TK9J90E,S1E
TK9J90E,S1E
MOSFET N-CH 900V 9A TO3P
Order Code:
CIS1164842
Manufacturer Part No:
TK9J90E,S1E
Manufacturer:
Package / Case:
TO-3P-3, SC-65-3
Detailed Description:
N-Channel 900 V 9A (Ta) 250W (Tc) Through Hole TO-3P(N)
Technical Datasheet:
Buy with Confidence
TK9J90E,S1E Information
| Mfr | Toshiba Semiconductor and Storage |
|---|---|
| Series | - |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P(N) |
| Base Product Number | TK9J90 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 250W (Tc) |
| Drain to Source Voltage (Vdss) | 900 V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 900µA |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |