In stock:
90
$1.04160
Standard Package:
50
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.04160 | |
| 10 | $0.88796 | |
| 50 | $0.80255 | |
| 100 | $0.70787 | |
| 500 | $0.66444 | |
| 1000 | $0.64579 |
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Request for 2SK3564(STA4,Q,M)
2SK3564(STA4,Q,M)
MOSFET N-CH 900V 3A TO220SIS
Order Code:
CIS1164942
Manufacturer Part No:
2SK3564(STA4,Q,M)
Manufacturer:
Package / Case:
TO-220-3 Full Pack
Detailed Description:
N-Channel 900 V 3A (Ta) 40W (Tc) Through Hole TO-220SIS
Technical Datasheet:
Buy with Confidence
2SK3564(STA4,Q,M) Information
| Mfr | Toshiba Semiconductor and Storage |
|---|---|
| Series | π-MOSIV |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220SIS |
| Base Product Number | 2SK3564 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 40W (Tc) |
| Drain to Source Voltage (Vdss) | 900 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.3Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |