In stock:
13
$0.85130
Standard Package:
1000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.85130 | |
| 10 | $0.73986 | |
| 30 | $0.67074 | |
| 100 | $0.60008 | |
| 500 | $0.56807 | |
| 1000 | $0.55420 |
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Request for BSP295H6327XTSA1
BSP295H6327XTSA1
MOSFET N-CH 60V 1.8A SOT223-4
Order Code:
CIS1455826
Manufacturer Part No:
BSP295H6327XTSA1
Manufacturer:
Package / Case:
TO-261-4, TO-261AA
Detailed Description:
N-Channel 60 V 1.8A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Technical Datasheet:
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BSP295H6327XTSA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | SIPMOS® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | PG-SOT223-4 |
| Base Product Number | BSP295 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 1.8W (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1.8A, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 400µA |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 368 pF @ 25 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |