Out of stock
$3.48870
Standard Package:
1000
Quantity | Unit Price | |
---|---|---|
1 | $3.48870 | |
200 | $1.35048 | |
500 | $1.30373 | |
1000 | $1.28000 |
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Request for FQI7N60TU
FQI7N60TU Information
Mfr | onsemi |
---|---|
Series | QFET® |
Package | Tube |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package | I2PAK (TO-262) |
Base Product Number | FQI7N60 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 3.13W (Ta), 142W (Tc) |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1Ohm @ 3.7A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1430 pF @ 25 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | Not Applicable |
REACH Status | REACH Unaffected |