In stock:
2
$12.39320
Standard Package:
1000
Quantity | Unit Price | |
---|---|---|
1 | $12.39320 | |
10 | $11.89995 | |
30 | $11.04482 | |
100 | $10.29999 |
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Request for IMBG120R090M1HXTMA1
IMBG120R090M1HXTMA1
SICFET N-CH 1.2KV 26A TO263
Order Code:
CIS1461833
Manufacturer Part No:
IMBG120R090M1HXTMA1
Manufacturer:
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Detailed Description:
N-Channel 1200 V 26A (Tc) 136W (Tc) Surface Mount PG-TO263-7-12
Technical Datasheet:
IMBG120R090M1HXTMA1 Information
Mfr | Infineon Technologies |
---|---|
Series | CoolSiC™ |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Supplier Device Package | PG-TO263-7-12 |
Base Product Number | IMBG120 |
Technology | SiCFET (Silicon Carbide) |
FET Type | N-Channel |
Power Dissipation (Max) | 136W (Tc) |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 125mOhm @ 8.5A, 18V |
Vgs(th) (Max) @ Id | 5.7V @ 3.7mA |
Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 18 V |
Vgs (Max) | +18V, -15V |
Input Capacitance (Ciss) (Max) @ Vds | 763 pF @ 800 V |
FET Feature | Standard |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |