Out of stock
$1.26260
Standard Package:
500
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.26260 | |
| 200 | $0.48926 | |
| 500 | $0.47234 | |
| 1000 | $0.46300 |
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Request for IPAN65R650CEXKSA1
IPAN65R650CEXKSA1
MOSFET N-CH 650V 10.1A TO220
Order Code:
CIS1461276
Manufacturer Part No:
IPAN65R650CEXKSA1
Manufacturer:
Package / Case:
TO-220-3 Full Pack
Detailed Description:
N-Channel 650 V 10.1A (Tc) 28W (Tc) Through Hole PG-TO220-FP
Technical Datasheet:
Buy with Confidence
IPAN65R650CEXKSA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | CoolMOS™ |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | PG-TO220-FP |
| Base Product Number | IPAN65 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 28W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 10.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 2.1A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 210µA |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |