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In stock: 10
$5.97110
Standard Package: 1000
Quantity Unit Price
1 $5.97110
10 $5.24203
30 $4.79778
100 $4.42638

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Request for IPB019N08N3GATMA1

IPB019N08N3GATMA1

MOSFET N-CH 80V 180A TO263-7

Order Code:
CIS1455880
Manufacturer Part No:
IPB019N08N3GATMA1
Manufacturer:
Package / Case:
TO-263-7, D²Pak (6 Leads + Tab)
Detailed Description:
N-Channel 80 V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7
Technical Datasheet:
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IPB019N08N3GATMA1 Information

More Information
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package PG-TO263-7
Base Product Number IPB019
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 300W (Tc)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 206 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14200 pF @ 40 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected