In stock:
18
$3.74660
Standard Package:
1000
Quantity | Unit Price | |
---|---|---|
1 | $3.74660 | |
10 | $3.29364 | |
30 | $3.01789 | |
100 | $2.78672 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for IPB024N08N5ATMA1
IPB024N08N5ATMA1
MOSFET N-CH 80V 120A D2PAK
Order Code:
CIS1461409
Manufacturer Part No:
IPB024N08N5ATMA1
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 80 V 120A (Tc) 214W (Tc) Surface Mount PG-TO263-3
Technical Datasheet:
IPB024N08N5ATMA1 Information
Mfr | Infineon Technologies |
---|---|
Series | OptiMOS™ |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | PG-TO263-3 |
Base Product Number | IPB024 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 214W (Tc) |
Drain to Source Voltage (Vdss) | 80 V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 2.4mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 3.8V @ 154µA |
Gate Charge (Qg) (Max) @ Vgs | 123 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 8970 pF @ 40 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |