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In stock: 20
$1.86550
Standard Package: 1000
Quantity Unit Price
1 $1.86550
10 $1.77763
30 $1.72596
100 $1.67261
500 $1.57000
1000 $1.55900

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Request for IPB100N04S4H2ATMA1

IPB100N04S4H2ATMA1

MOSFET N-CH 40V 100A TO263-3

Order Code:
CIS1456149
Manufacturer Part No:
IPB100N04S4H2ATMA1
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 40 V 100A (Tc) 115W (Tc) Surface Mount PG-TO263-3-2
Technical Datasheet:
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IPB100N04S4H2ATMA1 Information

More Information
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3-2
Base Product Number IPB100
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 115W (Tc)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 70µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7180 pF @ 25 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected