In stock:
97
$18.08920
Standard Package:
1000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $18.08920 | |
| 200 | $7.00233 | |
| 500 | $6.75632 | |
| 1000 | $6.63331 |
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Request for IPB110N20N3LFATMA1
IPB110N20N3LFATMA1
MOSFET N-CH 200V 88A TO263-3
Order Code:
CIS1455869
Manufacturer Part No:
IPB110N20N3LFATMA1
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 200 V 88A (Tc) 250W (Tc) Surface Mount PG-TO263-3
Technical Datasheet:
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IPB110N20N3LFATMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | OptiMOS™ 3 |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO263-3 |
| Base Product Number | IPB110 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 250W (Tc) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 88A, 10V |
| Vgs(th) (Max) @ Id | 4.2V @ 260µA |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 100 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |