In stock:
1025
$3.11250
Standard Package:
1000
Quantity | Unit Price | |
---|---|---|
1 | $3.11250 | |
10 | $2.73029 | |
30 | $2.49685 | |
100 | $2.30138 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for IPB200N25N3GATMA1
IPB200N25N3GATMA1
MOSFET N-CH 250V 64A D2PAK
Order Code:
CIS1456438
Manufacturer Part No:
IPB200N25N3GATMA1
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 250 V 64A (Tc) 300W (Tc) Surface Mount PG-TO263-3
Technical Datasheet:
IPB200N25N3GATMA1 Information
Mfr | Infineon Technologies |
---|---|
Series | OptiMOS™ |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | PG-TO263-3 |
Base Product Number | IPB200 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 300W (Tc) |
Drain to Source Voltage (Vdss) | 250 V |
Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 20mOhm @ 64A, 10V |
Vgs(th) (Max) @ Id | 4V @ 270µA |
Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 7100 pF @ 100 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |