In stock:
10
$1.42830
Standard Package:
1000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.42830 | |
| 10 | $1.36103 | |
| 30 | $1.32032 | |
| 100 | $1.27961 | |
| 500 | $1.20020 | |
| 1000 | $1.19177 |
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Request for IPB35N10S3L26ATMA1
IPB35N10S3L26ATMA1
MOSFET N-CH 100V 35A D2PAK
Order Code:
CIS1456144
Manufacturer Part No:
IPB35N10S3L26ATMA1
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 100 V 35A (Tc) 71W (Tc) Surface Mount PG-TO263-3
Technical Datasheet:
Buy with Confidence
IPB35N10S3L26ATMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO263-3 |
| Base Product Number | IPB35N10 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 71W (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 26.3mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 39µA |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |